ICP-RIE Plasma Etcher SI 500
Low damage for nano structuring – Due to the low ion energy distribution, low damage etching and nano structuring can be performed with our icp plasma etching tools.
Simple high rate etching – High rate plasma etching of Si for MEMS with high aspect ratio is easily performed either using room temperature alternating processes or cryogenic processes for smooth side walls.
Inhouse ICP plasma source – The Planar Triple Spiral Antenna (PTSA) source is a unique feature of SENTECH high end plasma process systems.
Dynamic temperature control – Substrate temperature setting and stability during the plasma etching processes are demanding criteria for high quality etching.
The SI 500 represents the leading edge for inductive coupled plasma (ICP) processing in research and production. It is based on the ICP plasma source PTSA, dynamic temperature controlled substrate electrode, fully controlled vacuum system, advanced SENTECH control software using remote field bus technology, and a very user-friendly general user interface for operating the SI 500. Flexibility and modularity are design characteristics of the SI 500.
Cost-effectiveness – RIE plasma etcher Etchlab 200 combines parallel plate plasma source design with direct load.
Upgrade-ability – According to its modular design, the plasma etcher Etchlab 200 is upgradeable with larger pumping unit, vacuum loadlock, and additional gas lines.
SENTECH control software – This plasma etcher is equipped with a user-friendly powerful software with mimic GUI, parameter window, recipe editor, data logging, user management.
The Etchlab 200 RIE plasma etcher represents a family of direct load plasma etcher combining the advantages of a parallel plate electrode design for RIE with the cost effective design of direct load. The Etchlab 200 features simple and fast sample loading from parts to 200 mm or 300 mm diameter wafer directly onto the electrode or on carrier. Flexibility, modularity, and a small footprint are design characteristics of the Etchlab 200. Large diagnostic windows located at the top electrode and the reactor can easily accommodate the SENTECH laser interferometer or OES and RGA systems. Ellipsometer ports are available for process monitoring using SENTECH insitu ellipsometers.
SI 591 Compact
Process flexibility – The RIE etcher SI 591 compact facilitates a large number of chlorine and fluorine based plasma etching processes.
Small footprint and high modularity – SI 591 compact can be configured as single reactor or as cluster tool with cassette-to-cassette loading.
SENTECH control software – Our plasma etching tools include user-friendly powerful software with mimic GUI, parameter window, recipe editor, data logging, and user management.
The SI 591 compact stands for excellent process reproducibility and plasma etching process flexibility due to the vacuum loadlock and fully computer controlled plasma etching process conditions. Flexibility, modularity, and a small footprint are design characteristics of the SI 591 compact. Samples up to 200 mm diameter and carrier can be loaded. The SI 591 compact can be configured for through the wall operation or minimal footprint with multiple options.